Realization of a high-voltage planar junction termination for power devices
- 28 February 1989
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (2) , 175-176
- https://doi.org/10.1016/0038-1101(89)90186-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Variation of lateral doping as a field terminator for high-voltage power devicesIEEE Transactions on Electron Devices, 1986