Variation of lateral doping as a field terminator for high-voltage power devices
- 1 March 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (3) , 426-428
- https://doi.org/10.1109/t-ed.1986.22505
Abstract
In this brief a new concept for high-voltage planar junctions is presented. The necessary widening of the space-charge region at the junction surface is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Compared to other planar junctions, this concept also yields a gain in active chip area. Experimental results show the validity of the concept.Keywords
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