Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 191-194
- https://doi.org/10.1016/0022-3093(93)90523-z
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide rangeApplied Physics Letters, 1993
- Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silanePhilosophical Magazine Part B, 1993
- Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soakingApplied Physics Letters, 1992
- Hydrogen, microstructure and defect density in hydrogenated amorphous siliconJournal de Physique I, 1992
- Fast metastable defect-creation in amorphous silicon by femtosecond light pulsesPhysical Review Letters, 1991
- A fully automated hot-wall multiplasma-monochamber reactor for thin film depositionJournal of Vacuum Science & Technology A, 1991
- Correlation of light-induced changes with hydrogen content in hydrogenated amorphous silicon filmsApplied Physics Letters, 1991
- Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silaneJournal of Non-Crystalline Solids, 1991
- Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous siliconApplied Physics Letters, 1990
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985