Stability of HF-etched Si(100) surfaces in oxygen ambient
- 10 December 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (24) , 4051-4053
- https://doi.org/10.1063/1.1425461
Abstract
In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si–Si bonds occurs without surface hydrogen removal, in the temperature range of 550–590 K for 1–20 mTorr O 2 pressures. The kinetics of the O 2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si–H steric hindrance for O 2 to access Si–Si backbonds.Keywords
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