Step relaxation and surface stress at H-terminated vicinal Si(111)
- 30 April 1993
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 206 (1-4) , 156-160
- https://doi.org/10.1016/0009-2614(93)85533-t
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutionsThe Journal of Chemical Physics, 1991
- Structure of Si(100)H: Dependence on the H chemical potentialPhysical Review B, 1991
- Distribution of terrace widths on a vicinal surface within the one-dimensional free-fermion modelPhysical Review B, 1991
- Finite-temperature phase diagram of vicinal Si(100) surfacesPhysical Review Letters, 1990
- Direct measurement of crystal surface stressPhysical Review Letters, 1990
- Mechanical stresses in (sub)monolayer epitaxial filmsPhysical Review Letters, 1990
- Si(100) Surface under an Externally Applied StressPhysical Review Letters, 1988
- Spontaneous Formation of Stress Domains on Crystal SurfacesPhysical Review Letters, 1988
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- 7×7 Reconstruction of Ge(111) Surfaces under Compressive StrainPhysical Review Letters, 1985