Mechanical stresses in (sub)monolayer epitaxial films
- 26 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (9) , 1039-1042
- https://doi.org/10.1103/physrevlett.64.1039
Abstract
We have studied stresses in thin Ge growing on Si(001), in situ and in real time, with submonolayer sensitivity. As a result of the 4.3% lattice mismatch, Ge films develop a compressive stress in the 2D growth regime, which saturates when 3D growth sets in. These measurements give new insight in the interatomic forces that play a dominant role in establishing growth mode and the generation of defects, and provide a new test for state-of-the-art total-energy calculations.Keywords
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