Native defects and diffusion in amorphous silicon -- a revisit
- 31 October 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 84 (1-2) , 221-225
- https://doi.org/10.1016/0038-1098(92)90328-7
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Atomistic origins of light-induced defects ina-SiPhysical Review Letters, 1992
- Synthesis of pentacoordinate silicon complexes from SiO2Nature, 1991
- Oxygen interaction with defects at the Si/SiO2 interfaceSolid State Communications, 1991
- Electronic structure of dangling and floating bonds in amorphous siliconPhysical Review Letters, 1989
- Glassy Quasithermal Distribution of Local Geometries and Defects in Quenched Amorphous SiliconPhysical Review Letters, 1988
- Quantitative analysis of EPR and electron-nuclear double resonance spectra ofDcenters in amorphous silicon: Dangling versus floating bondsPhysical Review B, 1988
- Defects in Amorphous Silicon: A New PerspectivePhysical Review Letters, 1986
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980
- Defects in bombarded amorphous siliconPhilosophical Magazine Part B, 1979