The luminescence lineshape of highly doped direct-gap III-V compounds
- 30 May 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (15) , 2951-2968
- https://doi.org/10.1088/0022-3719/21/15/026
Abstract
For the description of photoluminescence spectra of highly doped III-V compounds, the authors present a lineshape model without fitting parameters. Their calculations have been achieved in the framework of Klauder's fifth approximation. Using a screened and factorised Coulomb potential, they have applied this theory for the first time to the analysis of experimental spectra measured on n-InP and n- and p-GaAs. For slightly compensated material, their computations are in good agreement with experiment. On the basis of a quasi-particle concept that influence of doping on the energy dispersion near the band bottom is discussed. It appears that in highly doped direct-gap material any deviations in the corresponding band from the parabolic k dependence usually assumed to be related to high k-values are not the only factor to be considered.Keywords
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