Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

8 June 1998

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 72 (23) , 2996-2998
https://doi.org/10.1063/1.121519

Abstract

Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films.

Keywords

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