Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine
- 30 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (5) , 494-496
- https://doi.org/10.1063/1.103631
Abstract
We report the growth by low-pressure metalorganic vapor phase epitaxy of lattice-matched InGaAs on InP substrates using tertiarybutylarsine as the arsenic source. The grown layers are uniform in composition and are consistently n type with low background carrier concentrations (2–3×1015/cm3). Room-temperature mobility as high as 11 200 cm2/V s with a corresponding 77 °K mobility of 57 000 cm2/V s are measured. Photoluminescence gave a strong narrow peak with a full width half maximum=3.1 meV, with no evidence of carbon incorporation.Keywords
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