Atomic hydrogen reactions withPbcenters at the (100) Si/SiO2interface

We have investigated the reaction of atomic hydrogen with defects at the (100) Si/${\mathrm{SiO}}_2$ interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, ${\mathit{P}}_{\mathit{b}0}$ and ${\mathit{P}}_{\mathit{b}1}$, are either passivated or produced by atomic hydrogen, depending on the starting density. However, the two defects possess quantitative differences in behavior. The ${\mathit{P}}_{\mathit{b}0}$ center can be produced more readily than ${\mathit{P}}_{\mathit{b}1}$ and it is also much harder to passivate by atomic hydrogen. These differences between ${\mathit{P}}_{\mathit{b}0}$ and ${\mathit{P}}_{\mathit{b}1}$ help to explain previous observations of ${\mathit{P}}_{\mathit{b}0}$ center generation by radiation and by electrical stress.