Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
- 1 April 1999
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 2 (1) , 35-44
- https://doi.org/10.1016/s1369-8001(99)00004-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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