Sodium-ion implantation into silicon
- 16 November 1988
- journal article
- review article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 110 (1) , 9-34
- https://doi.org/10.1002/pssa.2211100102
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- The investigation of microdefects in high-purity silicon crystals by means of lithium decorationJournal of Applied Physics, 1973
- Analysis of Rb and Cs implantations in silicon by channeling and hall effect measurementsSolid-State Electronics, 1970
- The solubility of sodium in siliconSolid-State Electronics, 1969
- Behaviour of Sodium Donors in SiliconPhysica Status Solidi (b), 1969
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- Solubility and diffusion coefficient of sodium and potassium in siliconSolid-State Electronics, 1967
- Ion beams and solid state physicsNuclear Instruments and Methods, 1965
- Characteristics of silicon p-n junctions formed by sodium and cesium ion bombardmentSolid-State Electronics, 1964
- Einbau von Natrium in Silizium durch DiffusionPhysica Status Solidi (b), 1964
- Theory of Interstitial Impurity States in SemiconductorsPhysical Review B, 1958