Characteristics of silicon p-n junctions formed by sodium and cesium ion bombardment
- 31 December 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (12) , 925-931
- https://doi.org/10.1016/0038-1101(64)90071-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Differing Results Obtained in the Doping of Semiconductors by Energetic IonsJournal of Applied Physics, 1964
- PROPERTIES OF SILICON p-n JUNCTIONS FORMED BY Cs+ IMPLANTATION AT LOW ENERGIESApplied Physics Letters, 1963
- Silicon heavily doped by energetic cesium ionsJournal of Physics and Chemistry of Solids, 1963
- Determination of Avalanche Breakdown in pn JunctionsJournal of Applied Physics, 1959
- High-Voltage Conductivity-Modulated Silicon RectifierBell System Technical Journal, 1957
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949