Interface reactions and grain growth processes in poly-GaAs deposited on molybdenum substrates by the organometallic process
- 31 May 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (3) , 458-462
- https://doi.org/10.1016/0022-0248(83)90174-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivationIEEE Transactions on Electron Devices, 1980
- Grain size and its influence on efficiency in polycrystalline GaAs solar cellsSolar Cells, 1979
- Gallium arsenide films and solar cells on graphite substratesJournal of Applied Physics, 1979
- Gallium Arsenide Films on Tungsten/Graphite SubstratesJournal of the Electrochemical Society, 1978
- Growth of Polycrystalline GaAs for Solar Cell ApplicationsIBM Journal of Research and Development, 1978
- Properties of Polycrystalline AlAs / GaAs on Graphite Heterojunctions for Solar Cell ApplicationsJournal of the Electrochemical Society, 1978
- Growth modes of GaAs on tungstenJournal of Materials Science, 1971
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- The growth of gallium arsenide onto single-crystal metallic substratesJournal of Materials Science, 1967
- GaAs thin-film solar cellsIEEE Transactions on Electron Devices, 1967