Instability of the bouyancy driven convection in Si melts during Czochralski crystal growth
- 1 September 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 97 (1) , 42-49
- https://doi.org/10.1016/0022-0248(89)90245-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth methodJournal of Crystal Growth, 1988
- Three-dimensional simulations of the Czochralski bulk flow in a stationary transverse field and in a vertical magnetic field: Effects on the asymmetry of the flow and temperature distribution in the Si meltJournal of Crystal Growth, 1987
- Buoyancy-Driven Flows in Crystal-Growth MeltsAnnual Review of Fluid Mechanics, 1985
- Three-dimensional simulations of the Czochralski bulk flowJournal of Crystal Growth, 1984
- Convective transport in melt growth systemsJournal of Crystal Growth, 1983
- Flow transitions in Czochralski oxide meltsJournal of Crystal Growth, 1982
- Convective effects in crystals grown from meltJournal of Crystal Growth, 1981
- Numerical simulation of forced convection in the classical Czochralski method, in ACRT and CACRTJournal of Crystal Growth, 1981