Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method
- 1 May 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (3) , 365-370
- https://doi.org/10.1016/0022-0248(88)90009-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Temperature dependence of viscosity of molten GaAs by an oscillating cup methodApplied Physics Letters, 1987
- Oxygen transport in magnetic Czochralski growth of siliconJournal of Crystal Growth, 1987
- Image processing of Czochralski bulk flowJournal of Crystal Growth, 1986
- In-situ observation of LEC GaAs solid-liquid interface with newly developed X-ray image processing systemJournal of Crystal Growth, 1986
- Interface shape in Czochralski grown crystals: Effect of conduction and radiationJournal of Crystal Growth, 1985
- A parameter sensitivity study for Czochralski bulk flow of siliconJournal of Crystal Growth, 1982
- Fluid flow patterns in a simulated garnet meltJournal of Crystal Growth, 1982
- Simulations of Czochralski growth on crystal rotation rate influence in fixed cruciblesJournal of Crystal Growth, 1977
- Diameter control of lec grown GaP crystalsJournal of Crystal Growth, 1974
- Nonmixing Cells due to Crucible Rotation during Czochralski Crystal GrowthJournal of Applied Physics, 1968