On the nature of the deep 1.4 eV emission bands in CdTe — a study with photoluminescence and ODMR spectroscopy
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 656-659
- https://doi.org/10.1016/0022-0248(92)90831-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Proposed explanation of thep-type doping proclivity of ZnTePhysical Review B, 1991
- Role of native defects in wide-band-gap semiconductorsPhysical Review Letters, 1991
- A new 1.47 eV defect-luminescence band in MOCVD-grown CdTe on (100) GaAsJournal of Crystal Growth, 1990
- Possible identification of zinc-vacancy–donor-impurity complexes in zinc telluride by optically detected magnetic resonancePhysical Review B, 1986
- Electron paramagnetic resonance studies of chlorine, indium and aluminium-doped CdTe crystalsSolid State Communications, 1984
- Identification of Cu and Ag acceptors in CdTeSolid State Communications, 1982
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Optically detected electron resonance in phosphorus-doped ZnTeSolid State Communications, 1981
- Cathodoluminescence studies of the 1.4 eV bands in CdTeRevue de Physique Appliquée, 1977
- Self-Compensation-Limited Conductivity in Binary Semiconductors. IV.Physical Review B, 1965