Dislocation etching of GaSe single crystals
- 1 April 1971
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 6 (4) , 305-308
- https://doi.org/10.1007/bf02403096
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Chemical etching of dislocations in GaSeTransactions of the Faraday Society, 1970
- Experimental Evidence for the Validity of Lampert's Theory in the Negative Resistance Region of the GaSe(Sn)Physica Status Solidi (b), 1969
- The identification and some properties of point defects and non-basal dislocations in molybdenite surfacesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1968
- The identification and some physico-chemical consequences of non-basal edge and screw dislocations in graphiteProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Visualization of Dislocations on Basal Planes of GaSe Single CrystalsPhysica Status Solidi (b), 1967
- Investigation of Electrical Conductivity and Hall Effect in GaSe Single CrystalsPhysica Status Solidi (b), 1966
- Rectifying and Photoconductive Properties of p‐GaSe Single CrystalsPhysica Status Solidi (b), 1966
- Electroluminescence of GaSe Single Crystals Excited by Square PulsesPhysica Status Solidi (b), 1966
- The Luminescence of Some Ternary Chalcogenides and Mixed Binary Systems of Group III-VI Compounds: The Nature of Luminescence Centres in Group III-VI CompoundsProceedings of the Physical Society, 1963
- Photoconductivity of Gallium Selenide CrystalsPhysical Review B, 1959