Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor
- 1 April 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7) , 556-557
- https://doi.org/10.1063/1.93177
Abstract
A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 μm) at collector current levels of 15 mA were obtained.Keywords
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