The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 116 (3-4) , 271-282
- https://doi.org/10.1016/0022-0248(92)90633-t
Abstract
No abstract availableKeywords
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