Temperature effects on the band-gap energy inp-type III-V semiconductors
- 15 March 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (9) , 5861-5864
- https://doi.org/10.1103/physrevb.39.5861
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Accuracy of various theories of band-gap narrowing inp-doped semiconductorsPhysical Review B, 1987
- Band gap narrowing due to many-body effects in silicon and gallium arsenideJournal of Physics C: Solid State Physics, 1984
- Band-gap narrowing in heavily doped many-valley semiconductorsPhysical Review B, 1981
- Energy gap in Si and Ge: Impurity dependenceJournal of Applied Physics, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Polarons in semiconductors with a degenerate valence-band edgePhysical Review B, 1977
- The effect of electron interaction on the band gap of extrinsic semiconductorsJournal of Physics C: Solid State Physics, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Quasi-particle properties in an electron-hole liquidIl Nuovo Cimento B (1971-1996), 1974