InP PN Junction Waveguide Made by Mg-Ion Implantation
- 1 December 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (12R) , 1902-1904
- https://doi.org/10.1143/jjap.25.1902
Abstract
Fabrication processes to make an excellent p + n-junction on bulk n-InP by 24Mg-ion implantation are described. The leakage-current density through a junction was less than 10-7 A/cm2 with a rectification ratio larger than 106 at a bias voltage of - 1 V and a junction breakdown voltage below - 60 V without any guardring structure. A 2.0-mm long junction waveguide was used to control the long-wavelength (λ=1.135 µm) light with an extinction of 8.6 dB at 10 V.Keywords
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