Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide

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Abstract
The crystallinities and electrical properties of homoepitaxial diamond films grown from carbon monoxide have been investigated. The films were grown on high-pressure synthesized diamond (100) and (111) substrates by microwave plasma chemical vapor deposition, and were characterized by means of atomic force microscopy, reflection high-energy electron diffraction, cathodoluminescence, secondary electron microscopy and Hall effect measurement. The (100) films were smooth, whereas films grown on the (111) substrate became rough. The boron-doped (100) film also exhibited Hall mobility of 451 cm2/Vs.