Entropy calculation beyond the harmonic approximation: Application to diffusion by concerted exchange in Si
- 18 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (7) , 915-918
- https://doi.org/10.1103/physrevlett.66.915
Abstract
We present a formulation for calculating entropy based on the application of classical transition-rate theory to quantum-mechanical energy surfaces. Using this approach, which avoids difficulties due to anharmonicity and large energy barriers, we calculate the entropy of concerted exchange (CE) in Si and find it to be 3.3k in the high-temperature regime. The relatively high entropy of CE is traced to multiple equivalent exchange paths and to a a combination of a stiff mode at the equilibrium and a soft mode at the saddle-point configurations. Comparison to harmonic-approximation results shows substantial differences, in both the low- and in the high-temperature limits.Keywords
This publication has 7 references indexed in Scilit:
- First-principles calculations of diffusion coefficients: Hydrogen in siliconPhysical Review Letters, 1990
- Proton diffusion in crystalline siliconPhysical Review Letters, 1989
- Diffusion without Vacancies or Interstitials: A New Concerted Exchange MechanismPhysical Review Letters, 1986
- Migration of interstitials in siliconPhysical Review B, 1984
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- Barrier to Migration of the Silicon Self-InterstitialPhysical Review Letters, 1984
- Frequency factors and isotope effects in solid state rate processesJournal of Physics and Chemistry of Solids, 1957