Fabrication of high-quality oxides on SiC by remote PECVD
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1420-1423
- https://doi.org/10.1016/s0925-9635(97)00048-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Device-Quality SiO2/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon ProcessJapanese Journal of Applied Physics, 1992