Device-Quality SiO2/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon Process
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S)
- https://doi.org/10.1143/jjap.31.4387
Abstract
When using conventional high-temperature thermal oxidation processes to fabricate Si-based devices that include SiO2 dielectrics, the SiO2/Si interface and bulk-oxide layer are formed at the same time. We have developed a new low-temperature process that separates interface formation, by plasma-assisted oxidation, from bulk-oxide deposition, by plasma-assisted chemical-vapor deposition (CVD) and thereby separately controls, and optimizes the respective electrical properties of the SiO2/Si interface, and the SiO2 layer. This approach has been extended to multilayer oxide-nitride-oxide (ONO) dielectrics on Si substrates, and has also been successfully transferred to an integrated processing cluster tool that combines the new SiO2/Si oxidation/deposition process, with deposition of polycrystalline Si gate electrodes by a high-temperature, rapid thermal CVD process to form a stacked gate structure.Keywords
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