Edge luminescence and light absorption in GaSxSe1−x solid solutions at low temperatures
- 16 October 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 31 (2) , 707-711
- https://doi.org/10.1002/pssa.2210310244
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effect of Electric Fields on the Absorption Edge in GaSex S1−xPhysica Status Solidi (b), 1974
- Raman scattering from GaSxSe1-xSolid State Communications, 1974
- Near edge optical absorption and luminescence of GaSe, GaS and of mixed crystalsJournal of Luminescence, 1973
- Splitting and Coupling of Lattice Modes in the Layer Compounds GaSe, GaS, andPhysical Review B, 1973
- The electronic structure of GaSeIl Nuovo Cimento B (1971-1996), 1973
- Preparation and crystallography of gallium sulfide–selenide solid solutionsPhysica Status Solidi (a), 1971
- Indirect Energy Gap in GaSe and GaSPhysica Status Solidi (b), 1969
- Band Structures and Optical Properties of Semiconducting Layer Compounds GaS and GaSeJournal of the Physics Society Japan, 1968
- Band structure and optical properties of graphite and of the layer compounds GaS and GaSeIl Nuovo Cimento B (1971-1996), 1967
- Speculations on the Energy Band Structure of Ge—Si AlloysPhysical Review B, 1954