Avoiding Dislocation Formation for B, P, and As Implants in Silicon
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Pre-amorphization damage in ion-implanted siliconMaterials Science Reports, 1991
- High-energy ion implantation for ULSINuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- MeV-ion-induced damage in Si and its annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Avoiding preamorphization damage in MeV heavy ion-implanted siliconApplied Physics Letters, 1991
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Concepts of Backscattering SpectrometryPublished by Elsevier ,1978