Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon
- 1 March 1977
- journal article
- Published by Springer Nature in Journal of Radioanalytical and Nuclear Chemistry
- Vol. 38 (1) , 29-35
- https://doi.org/10.1007/bf02520180
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The need to use appropriate calibration curves for the anodic oxidation of ion-implanted siliconThin Solid Films, 1976
- Determination of phosphorus in semiconductor grade silicon by neutron activation analysisJournal of Radioanalytical and Nuclear Chemistry, 1975
- Aktivitätsbestimmung von Phosphor-32 mit Hilfe der Tscherenkow-StrahlungIsotopenpraxis Isotopes in Environmental and Health Studies, 1975
- A solvent extraction method for the determination of phosphorus-32 in sea waterAnalytica Chimica Acta, 1973
- Anwendung der Neutronenaktivierungsanalyse zur Untersuchung von Konzentrationaprofilen in SiliziumIsotopenpraxis Isotopes in Environmental and Health Studies, 1972
- Limits for qualitative detection and quantitative determination. Application to radiochemistryAnalytical Chemistry, 1968
- Determination of radiophosphorus by solvent-extractionTalanta, 1961