Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design
- 23 October 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (11) , 2696-2702
- https://doi.org/10.1109/ted.2006.883944
Abstract
AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AlN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMTKeywords
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