Formation of Aluminium Nitride by Nitrogen-Ion Implantation in Aluminium Single Crystal
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8R) , 1145
- https://doi.org/10.1143/jjap.23.1145
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterisation of aluminium nitride layers formed directly by 700-800 keV15N2+implantation into aluminiumJournal of Physics D: Applied Physics, 1982
- Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminumJournal of Applied Physics, 1981
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981