Abstract
A new method is demonstrated for the preparation of thin aluminum nitride layers using the direct nitridation aluminum by low-energy nitrogen ion implantation in the ion energy range 0.5-5 keV. The Al-nitride films were obtained at room temperature without any thermal annealing. For the first time Al-nitride was studied with Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) and the corresponding spectra, together with those of Al and Al2O3, are presented. An electron energy-level scheme for Al-nitride was derived from the AlLvv Auger spectra, from the valence electron excitation spectra, and from the Al(2p) and N(ls) core electron excitation spectra measured by ELS.