Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum
- 1 September 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5806-5810
- https://doi.org/10.1063/1.329474
Abstract
A new method is demonstrated for the preparation of thin aluminum nitride layers using the direct nitridation aluminum by low-energy nitrogen ion implantation in the ion energy range 0.5-5 keV. The Al-nitride films were obtained at room temperature without any thermal annealing. For the first time Al-nitride was studied with Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) and the corresponding spectra, together with those of Al and Al2O3, are presented. An electron energy-level scheme for Al-nitride was derived from the AlLvv Auger spectra, from the valence electron excitation spectra, and from the Al(2p) and N(ls) core electron excitation spectra measured by ELS.This publication has 16 references indexed in Scilit:
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