Time-of-flight measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field
- 27 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (22) , 2310-2312
- https://doi.org/10.1063/1.102047
Abstract
Time‐of‐flight measurements using a picosecond pulsed laser are made for a p‐AlGaAs/GaAs/AlGaAs double heterostructure to successfully obtain the velocity‐electric field relationship for photoexcited electrons at room temperature. In the high electric field region, velocity enhancements are observed, which have never been reported until now. Possible mechanisms, which attribute to the velocity enhancement, are also discussed.Keywords
This publication has 7 references indexed in Scilit:
- Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructuresSolid-State Electronics, 1988
- Reduced intervalley transfer in a GaAsAlGaAs heterojunctionSolid-State Electronics, 1988
- Single heterostructures for optical transport experimentsApplied Physics Letters, 1987
- High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight techniqueJournal of Applied Physics, 1983
- Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widthsSolid-State Electronics, 1980
- Absolute Measurement of the Electron Velocity-Field Characteristic of InSbPhysical Review B, 1973
- Transport Properties of GaAsPhysical Review B, 1968