Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

This publication has 18 references indexed in Scilit:

• Double jeopardy in the nanoscale court [MOSFET modeling]
  IEEE Circuits and Devices Magazine, 2003
• An explicit expression for surface potential at high-end of moderate inversion
  IEEE Transactions on Electron Devices, 2002
• Accuracy of approximations in MOSFET charge models
  IEEE Transactions on Electron Devices, 2002
• A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling
  IEEE Transactions on Electron Devices, 2001
• New approach for defining the threshold voltage of MOSFETs
  IEEE Transactions on Electron Devices, 2001
• Threshold voltage definition and extraction for deep-submicron MOSFETs
  Solid-State Electronics, 2001
• Analytical approximation for the MOSFET surface potential
  Solid-State Electronics, 2001
• Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances
  Solid-State Electronics, 2000
• Bipolar transistor circuit analysis using the Lambert W-function
  IEEE Transactions on Circuits and Systems I: Regular Papers, 2000
• An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs
  IEEE Transactions on Electron Devices, 1999