Titanium disulfide thin film prepared by plasma CVD
- 1 December 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (12) , 2894-2901
- https://doi.org/10.1557/jmr.1990.2894
Abstract
Titanium disulfide films were prepared by plasma CVD. Crystalline orientation of layered TiS2 was investigated in relation to deposition rate, film thickness, and kinds of substrate. The preferred orientation of TiS2 basal plane perpendicular to substrates was obtained on the films with their thickness of more than ca. 10 μm at the deposition rate of ca. 4 ⊠ 10−3 g/cm2·h on all kinds of substrate. This orientation resulted in a large discharge capacity in a lithium battery cathode application.Keywords
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