The vapour phase deposition of thick epitaxial (100) ZnS layers on elemental and compound substrates in H2 gas flow
- 1 August 1975
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 10 (8) , 1317-1322
- https://doi.org/10.1007/bf00540821
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The influence of growth conditions on the deposition of thick epitaxial (100) ZnS layers in HCl: H2 gas flowJournal of Physics D: Applied Physics, 1974
- The epitaxial growth of zinc sulphide on silicon by forced vapour transport in argon flowJournal of Crystal Growth, 1972
- Vapor-Phase Epitaxial Growth and Some Properties of ZnSe, ZnS, and CdSJournal of the Electrochemical Society, 1972
- An optical image storage and processing device using electrooptic ZnSIEEE Transactions on Electron Devices, 1971
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971
- Thick Epitaxial Films of Cubic ZnSe and ZnS by Vapor Phase TransportJournal of the Electrochemical Society, 1971
- The epitaxial growth of zinc sulphide on silicon by forced vapour transport in hydrogen flowJournal of Materials Science, 1970
- The epitaxial growth of zinc sulphide on silicon by vacuum evaporationJournal of Physics D: Applied Physics, 1968
- Single Synthetic Zinc Sulfide CrystalsPhysical Review B, 1950