Energy-level dynamics of deep gap states in hydrogenated amorphous silicon under illumination
- 15 December 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (23) , 16696-16700
- https://doi.org/10.1103/physrevb.54.16696
Abstract
Relaxation dynamics of deep defects, recently observed in modulated photocurrent and electron drift measurements, are explained in terms of random temporal fluctuations of localized-state energies. The fluctuations can be caused by a randomly changing microscopic configuration of excess charge carriers or by carrier annihilation processes. A model is developed which leads to dependences of the thermal emission energy upon temperature and optical bias, in good agreement with existing experimental data. © 1996 The American Physical Society.Keywords
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