Inhomogeneous defect activation by rapid thermal processes in silicon
- 27 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (13) , 1235-1237
- https://doi.org/10.1063/1.100726
Abstract
In silicon, rapid thermal processes are observed to induce recombination centers whose distribution as a function of the depth below the surfaces shows an extremum towards the middle of 1000‐μm‐thick samples. This nonhomogeneous defect activation is correlated to a surface effect. Impurity‐related complexes are believed to be the origin of these recombination centers.Keywords
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