Electron diffusion length in rapid thermal processed p-type silicon
- 14 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (20) , 1928-1930
- https://doi.org/10.1063/1.100348
Abstract
Electron diffusion length in p‐type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recombination center induced in the bulk. This recombination center is responsible for the severe degradation of the diffusion length, even at process temperatures as low as 600 °C. An activation energy of 1.48±0.28 eV is found for the center introduction rate. The work shows that the diffusion length measurement is a very sensitive tool in the study of rapid thermal process induced recombination centers in the bulk, with direct correlation to device performance.Keywords
This publication has 11 references indexed in Scilit:
- Rapid isothermal processingJournal of Applied Physics, 1988
- Process-induced and gold acceptor defects in siliconPhysical Review B, 1987
- Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ SiliconJournal of the Electrochemical Society, 1987
- Defect-state generation in Czochralski-grown (100) silicon rapidly annealed with incoherent lightJournal of Applied Physics, 1987
- Quenched-in defects in flashlamp-annealed siliconApplied Physics Letters, 1986
- Lattice disorder and recombination centres in heat-treated FZ siliconPhysica Status Solidi (a), 1985
- Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealingApplied Physics A, 1985
- Experiments on the origin of process−induced recombination centers in siliconJournal of Applied Physics, 1975
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- A Method for the Measurement of Short Minority Carrier Diffusion Lengths in SemiconductorsJournal of Applied Physics, 1961