A novel millimeter-wave IC on Si substrate using flip-chip bonding technology
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1763-1766
- https://doi.org/10.1109/mwsym.1994.335100
Abstract
A new MM-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band by using micro bump bonding technology. Several MFICs such as HFET/HBT amplifiers have been fabricated to confirm their designed performance.<>Keywords
This publication has 1 reference indexed in Scilit:
- Low-noise InGaAs HEMT using the new off-set recess gate processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003