GaInP/AlGaInP 670 nm singlemode DBR laser
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2241-2243
- https://doi.org/10.1049/el:19961484
Abstract
The first singlemode room temperature AlGaInP monolithically frequency-stabilised lasers are reported. Single frequency and single spatial mode operation is obtained using a second order diffraction grating to stabilise the operating wavelength. The device produced > 20 mW CW with a differential efficiency of 0.18 W/A and a sidemode suppression ratio of > 30 dB.Keywords
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