Hopping transport in δ-doping layers in GaAs
- 15 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (12) , 8477-8484
- https://doi.org/10.1103/physrevb.41.8477
Abstract
We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple δ layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative-magnetoresistance effect that stems from quantum interference of neighboring hopping paths.Keywords
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