Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
- 1 March 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (3) , 233-244
- https://doi.org/10.1007/bf00615010
Abstract
No abstract availableKeywords
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