Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1,2,3 grown by molecular beam epitaxy

This publication has 10 references indexed in Scilit:

• Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-AlxGa1−xAs (001) superlattices
  Physical Review B, 1986
• High-throughput high-yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy
  Applied Physics Letters, 1986
• Improved assessment of structural properties of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
  Physical Review B, 1986
• Band Structure of Semiconductor Superlattices with Ultrathin Layers (GaAs)_n/(AlAs)_nwithn=1, 2, 3, 4
  Journal of the Physics Society Japan, 1985
• Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition
  Journal of Applied Physics, 1985
• Phase-Locked Epitaxy Using RHEED Intensity Oscillation
  Japanese Journal of Applied Physics, 1984
• A New High-Electron Mobility Monolayer Superlattice
  Japanese Journal of Applied Physics, 1983
• Dynamics of film growth of GaAs by MBE from Rheed observations
  Applied Physics A, 1983
• Dynamics of intrinsic and nitrogen-induced exciton emission in indirect-gapGa1−xAlxAs
  Physical Review B, 1983
• Epitaxial structures with alternate-atomic-layer composition modulation
  Applied Physics Letters, 1976