Quantitative analysis of impurities in HgCdTe using secondary ion mass spectrometry
- 1 October 1985
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 7 (5) , 211-216
- https://doi.org/10.1002/sia.740070503
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Application of SIMS to heavy metal telluridesSurface and Interface Analysis, 1982
- Ion implanted standards for secondary ion mass spectrometric determination of the Group IA-VIIA elements in semiconducting matrixesAnalytical Chemistry, 1980
- Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometryApplied Physics Letters, 1977
- SECONDARY ION MASS SPECTROMETRYPublished by Elsevier ,1975