Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing

1 December 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 12 (12) , 646-648
https://doi.org/10.1109/55.116942

Abstract

Using Kelvin test structures, electromigration performances of selective CVD tungsten filled vias under DC, pulsed DC, and AC current signals have been studied. The metallization consists of Al-Cu/TiW multilevel metals. The via electromigration lifetime exhibits a current polarity dependence. The via AC lifetimes are found to be much longer (more than 1000*) than DC lifetimes under the same peak stressing current density. The via lifetimes under pulsed DC stress of 50% duty factor are twice the DC lifetimes at low-frequency regions (10 kHz). The results are in agreement with the vacancy relation model.

Keywords

This publication has 3 references indexed in Scilit:

Electromigration characteristics of vias in Ti:W/Al-Cu(2 wt.%) multilayered metallization
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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Electromigration reliability for a tungsten-filled via hole structure
IEEE Transactions on Electron Devices, 1990