Electromigration characteristics of vias in Ti:W/Al-Cu(2 wt.%) multilayered metallization
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Effective kinetic variations with stress duration for multilayered metallizationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Effects of annealing temperature on electromigration performance of multilayer metallization systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film SystemMRS Proceedings, 1988
- Interconnection and electromigration scaling theoryIEEE Transactions on Electron Devices, 1987
- The effect of passivation thickness on the electromigration lifetime of Al/Cu thin film conductorsJournal of Vacuum Science & Technology A, 1983
- Activation energies for the different electromigration mechanisms in aluminumSolid-State Electronics, 1981
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976
- Activation Energy for Electromigration Failure in Aluminum Films Containing CopperJournal of Vacuum Science and Technology, 1972
- Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film ConductorsJournal of Applied Physics, 1971
- The effect of copper additions on electromigration in aluminum thin filmsMetallurgical Transactions, 1971