Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells
- 1 May 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (5) , 627-633
- https://doi.org/10.1088/0268-1242/10/5/010
Abstract
A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AlGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature.Keywords
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