Preparation of stable and photoconductive hydrogenated amorphous silicon from a Xe-diluted silane plasma

Publisher Website
Google Scholar
Abstract
Photoconductive and stable hydrogenated amorphous silicon thin films, prepared by plasma‐enhanced chemical vapor deposition using a Xe‐silane mixture at a substrate temperature of 250 °C, did not show any photo‐induced degradation of the photoconductivity after 104 min light soaking (air mass‐1, 100 mW/cm2). The network structure of these films is inhomogeneous and includes a large amount of clustered hydrogen as indicated by the low‐temperature thermal effusion and the large, broad component in the nuclear magnetic resonance spectrum.